Forming gate tie between abutting cells and resulting device

An apparatus comprising:

• a substrate;
• one or more continuous fins on the substrate;
• gates perpendicular to and over the one or more continuous fins, forming a first FinFET cell and a second FinFET cell;
• and
• source and drain contact lines parallel to and between the gates, wherein a source contact line of the first FinFET cell is adjacent to a drain contact line of the second FinFET cell, and the source contact line and the drain contact line are on opposite sides of a gate.

A method comprising:

• forming one or more continuous fins on a substrate;
• forming gates perpendicular to and over the one or more continuous fins to form a first FinFET cell and a second FinFET cell;
• and
• forming source and drain contact lines parallel to and between the gates, wherein a source contact line of the first FinFET cell is adjacent to a source contact line of the second FinFET cell on opposite sides of a gate.

An apparatus comprising:

• a substrate;
• one or more continuous fins on the substrate;
• gates perpendicular to and over the one or more continuous fins, forming a first FinFET cell and a second FinFET cell;
• and
• source and drain contact lines parallel to and between the gates, wherein a source contact line of the first FinFET cell is adjacent to a source contact line of the second FinFET cell on opposite sides of a gate.