Method Of Forming Chip With Through Silicon Via Electrode

A method of forming a chip with a though-silicon-via (TSV) electrode, comprising:

• providing a substrate, wherein the substrate has a first surface and a second surface;
• performing a thinning process from the second surface of the substrate thereby making the second surface become a third surface;
• forming a penetration via which penetrates through the first surface and the third surface;
• forming a patterned material layer on the third surface of the substrate, wherein the patterned material layer has an opening exposing the penetration via;
• simultaneously filling a conductive layer into the penetration via and the opening such that the conductive layer in the penetration via becomes a TSV electrode and the conductive layer in the opening becomes a surface conductive layer;
• and
• forming an integrated passive device (IPD) on the third surface, the IPD comprising a surface conductive layer, wherein the surface conductive layer is a redistribution layer disposed on the third surface, outside the penetration via, and the surface conductive layer and the TSV electrode are monolithic.