Semiconductor structure and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJulia Huang, Hsiang-Wei Lin
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Abstract
The present disclosure provides a method for forming a semiconductor structure. In accordance with some embodiments, the method includes providing a substrate and a conductive feature formed over the substrate; forming a low-k dielectric layer over the conductive feature; forming a contact trench aligned with the conductive feature; and selectively growing a sealing layer which is a monolayer formed on sidewalls of the contact trench.
Claims20
A method for forming a semiconductor structure, comprising:
- providing a substrate and a conductive feature formed over the substrate;
- forming a low-k dielectric layer over the conductive feature;
- forming a contact trench aligned with the conductive feature;
- and
- selectively growing a sealing layer which is a monolayer formed on sidewalls of the contact trench.
A method for forming a semiconductor structure, comprising:
- providing a substrate and a conductive feature formed over the substrate;
- forming an etch stop layer over the conductive feature;
- forming a low-k dielectric layer over the etch stop layer;
- etching the low-k dielectric layer and the etch stop layer to form a contact trench aligned with the conductive feature in the low-k dielectric layer;
- and
- forming a Si containing sealing layer using a Si containing precursor,
- wherein the sealing layer is self-aligned and conformed to sidewall surfaces of the contact trench.
A semiconductor structure, comprising:
- a semiconductor substrate and a conductive feature formed over the substrate;
- an etch stop layer formed over the conductive feature;
- a low-k dielectric layer formed over the etch stop layer;
- a contact trench formed through the low-k dielectric layer and the etch stop layer;
- and
- a self-assembled sealing layer formed on sidewalls of the contact trench,
- wherein the self-assembled sealing layer is a monolayer.
Dependencies are inferred from the claim text.