Trench structure for high performance interconnection lines of different resistivity and method of making same

A method, comprising:

• forming an interlevel dielectric layer over a substrate;
• forming a hard mask on a top planar surface of the interlevel dielectric layer;
• forming openings in the hard mask including a first plurality of openings having a first depth which does not extend through the hard mask and a second plurality of openings having a second depth which does not extend through the hard mask but which is smaller than the first depth;
• performing a directional etch simultaneously through the first and second pluralities of openings in the hard mask to etch through the hard mask and into the interlevel dielectric layer so as to form first and second pluralities of trenches, wherein the first plurality of trenches has a first trench depth and the second plurality of trenches has a second trench depth which is smaller than the first trench depth;
• and
• filling the first and second pluralities of trenches with a metal material to form first and second interconnection lines having a substantially equal pitch.

A method, comprising:

• forming an interlevel dielectric layer over a substrate;
• forming a first plurality of trenches having a first depth in the interlevel dielectric layer;
• forming a second plurality of trenches having a second depth in the interlevel dielectric layer;
• and
• depositing a metal material filling both the first plurality of trenches and the second plurality of trenches so as to form first interconnection lines within the first plurality of trenches and second interconnection lines within the second plurality of trenches;
• wherein the first and second interconnection lines have a substantially equal pitch.