Process for fabricating a semiconductor-on-insulator substrate
AssigneeSoitec
InventorsChristophe Gourdel, Oleg Kononchuk
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Abstract
The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.
Claims20
A fabrication process for fabricating a plurality of semiconductor-on-insulator structures, comprising:
- providing a plurality of semiconductor-on-insulator structures each including a carrier substrate, a semiconductor layer, and an insulator layer between the carrier substrate and the semiconductor layer, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm;
- and
- after providing the plurality of semiconductor-on-insulator structures;
- heat treating the plurality of semiconductor-on-insulator structures and partially dissolving the silicon dioxide layer of each of the semiconductor-on-insulator structures in a non-oxidizing atmosphere so as to reduce the thickness of the silicon dioxide layer of each of the semiconductor-on-insulator structures, wherein a pressure of the non-oxidizing atmosphere is lower than 0.1 bar.
Dependencies are inferred from the claim text.