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US 2015/0311092 A1Published application
Method for providing lateral thermal processing of thin films on low-temperature substrates
AssigneeNcc Nano, LLC
InventorsKURT A. SCHRODER, ROBERT P. WENZ
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Abstract
A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.
Claims7
A method for thermally processing a very thin film, said method comprising:
- patterning one absorbing trace adjacent to a thin film, wherein said one absorbing traces is made of metal, wherein said thin film is located on top of a substrate;
- irradiating said absorbing trace with at least one electromagnetic pulse to heat up said absorbing trace;
- and
- allowing heat from said absorbing trace to thermally process said very thin film.
1 more element
Dependencies are inferred from the claim text.