US 2015/0311086 A1 · Systems and Methods for a Sequential Spacer Scheme

Abstract

The present disclosure describes methods for transferring a desired layout into a target layer. The method includes a step of forming a spacer, having a second width, around a first and a second desired layout feature pattern of the desired layout over a semiconductor substrate. The first desired layout feature pattern is formed using a first sub-layout and the second desired layout feature pattern is formed using a second sub-layout. The first and second desired layout feature patterns are separated by a first width. The method further includes forming a third desired layout feature pattern according to a third sub-layout. The third desired layout feature pattern is shaped in part by the spacer. The method further includes removing the spacer from around the first and second desired layout feature pattern and etching the target layer using the first, second, and third layout feature patterns as masking features.

Claims21

Dependent claims

A method for transferring a desired layout into a target layer on a semiconductor substrate, the method comprising:

forming a spacer around a first desired layout feature pattern and a second desired layout feature pattern of the desired layout over the semiconductor substrate, the first desired layout feature pattern formed over the target layer using a first sub-layout and the second desired layout feature pattern formed over the target layer using a second sub-layout, wherein the first and second desired layout feature patterns are separated by a first width and the spacer has a second width;
forming a third desired layout feature pattern over the target layer according to a third sub-layout, the third desired layout feature pattern shaped in part by the spacer;
etching the spacer from around the first and second desired layout feature pattern;
and
after etching the spacer, etching the target layer using the first, second, and third layout feature patterns as masking features to form corresponding first, second, and third layout features in the target layer.

2 more elements

A method for transferring a desired layout into a target layer on a semiconductor substrate, the method comprising:

receiving a decomposed desired layout, the decomposed desired layout comprises a first sub-layout, a second sub-layout, and a third sub-layout of the desired layout;
defining a first material layer with the first sub-layout to form a first feature pattern;
forming a first spacer around the first feature pattern;
defining a second material layer with the second sub-layout to form a second feature pattern, the first and second feature patterns being separated by at least a width of the first spacer;
forming a second spacer around the first and second feature patterns;
defining a third material layer with the third sub-layout to form a third feature pattern, the third feature pattern being separated from the first and second feature patterns by at a width of the second spacer;
and
patterning the target layer using the first, second, and third feature patterns.

5 more elements

Dependencies are inferred from the claim text.

Systems and Methods for a Sequential Spacer Scheme

Life of this patent

Systems and Methods for a Sequential Spacer Scheme

Life of this patent

Abstract

Claims21