Replacement low-k spacer
AssigneeGlobalfoundries Inc.
InventorsChangyong XIAO, Hoong Shing WONG, Deepasree KONDUPARTHI, Rohit PAL
Life of this patent
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Abstract
A method includes providing a gate structure having a dummy gate, a first spacer along a side of the gate. The dummy gate and the spacer are removed to expose a gate dielectric. A second spacer is deposited on at least one side of a gate structure cavity and a top of the gate dielectric. A bottom portion of the second spacer is removed to expose the gate dielectric and the gate structure is wet cleaned.
Claims13
A method, comprising:
- providing a gate structure having a dummy gate, and a first spacer along a side of the dummy gate;
- removing the dummy gate and the first spacer to expose a gate dielectric;
- depositing a second spacer on at least one side of a gate structure cavity and a top of the gate dielectric;
- removing a bottom portion of the second spacer to expose the gate dielectric;
- wet cleaning the gate structure;
- and
- exerting stress on the gate structure after the depositing the second spacer and before the removing the bottom portion of the second spacer,
The method of claim I wherein the removing the dummy gate and the first spacer comprises removing the first spacer after a gate stack formation.
(canceled)
Dependencies are inferred from the claim text.