Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuaki Ebata, Mami Nishimura, Nozomi Tajima
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Abstract
A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.
Claims17
A sputtering target comprising an oxide that comprises an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and comprising a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies the following formulas (1) to (4):
- 0.10≦In/(In+Sn+An+Al)≦0.60 (1)
- 0.01≦Sn/(In+Sn+Zn+Al)≦0.30 (2)
- 0.10≦Zn/(In+Sn+Zn+Al)≦0.65 (3)
- 0.01≦Al/(In+Sn+Zn+Al)≦0.30 (4)
- wherein in the formulas, In, Sn, Zn and Al are respectively the substance amount of the indium element, the tin element, the zinc element and the aluminum element in the sputtering target.
A method for producing a sputtering target, comprising:
- a step of elevating a temperature of a formed body of an oxide that comprises an indium element, a tin element, a zinc element and an aluminum element from 800° C. to a sintering temperature at a temperature-elevating rate of 0.1 to 2° C./m, and
- retaining the formed body at the sintering temperature for 10 to 50 hours,
- wherein the sintering temperature is 1200° C. to 1650° C.
Dependencies are inferred from the claim text.