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US 2015/0311070 A1Published application
Multiple Layer Substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLong-Shih Lin, Fu-Hsiung Yang, Kun-Ming Huang, Ming-Yi Lin, Po-Tao Chu
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Abstract
A substrate for an integrated circuit includes a device wafer having a raw carrier concentration and an epitaxial layer disposed over the device wafer. The epitaxial layer has a first carrier concentration. The first carrier concentration is higher than the raw carrier concentration.
Claims20
A method of fabricating a substrate for an integrated circuit, the method comprising:
- receiving a device wafer;
- and
- forming a first epitaxial layer over the device wafer, wherein the device wafer has a raw carrier concentration, the first epitaxial layer has a first carrier concentration, and the first carrier concentration ranges from 1.25 to 2.25 times the raw carrier concentration.
A method for forming a substrate for an integrated circuit, the method comprising:
- forming a buried oxide layer over a handle wafer;
- forming a device wafer having a raw carrier concentration over the buried oxide layer;
- forming a first epitaxial layer over the device wafer, the first epitaxial layer having a first carrier concentration higher than the raw carrier concentration;
- and
- forming additional epitaxial layers over the first epitaxial layer, each of the additional epitaxial layers having a carrier concentration Cx, wherein
- C
- x
- =
- C
- 1
- -
- (
- X
- -
- 1
- )
- (
- N
- -
- 1
- )
-
- (
- C
- 1
- -
- C
- N
- )
- ,
- C1 is the first carrier concentration, CN is a carrier concentration of a top epitaxial layer, N is a number of the epitaxial layers including the first epitaxial layer and the additional epitaxial layers, X is a number of each epitaxial layer starting with 2 for the additional epitaxial layer directly above the first epitaxial layer and increasing by 1 for each additional epitaxial layer above, and C1 is higher than CN.
28 more elements
A method of forming a semiconductor device, the method comprising:
- forming a semiconductor wafer comprising silicon, the semiconductor wafer having a raw carrier concentration;
- and
- forming an epitaxial layer on the semiconductor wafer, the epitaxial layer comprising silicon and dopants, wherein the epitaxial layer has a first carrier concentration greater than the raw carrier concentration of the semiconductor wafer, and wherein the first carrier concentration of the epitaxial layer is from about 1.25 times to about 2.25 times the raw carrier concentration.
Dependencies are inferred from the claim text.