Fabricating low-defect rare-earth doped piezoelectric layer
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsTangshiun Yeh, Phil Nikkel, Kevin J. Grannen, Chris Feng, John Choy
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Abstract
A plasma vapor deposition (PVD) system and method for depositing a piezoelectric layer over a substrate are disclosed. A plasma is created in a reaction chamber creates from the sputtering gas supplied to the reaction chamber. The plasma sputters atoms from the sputtering target, which are deposited on the substrate for forming the thin film of the material.
Claims37
A plasma vapor deposition (PVD) system for depositing a piezoelectric layer over a substrate, the PVD system comprising:
- a reaction chamber configured to contain the substrate, a sputtering target, a sputtering gas and a plasma;
- and
- a magnet system positioned adjacent the sputtering target and configured to generate a magnetic field in the reaction chamber, the magnet system configured to generate a magnetic field pattern having a greater magnetic flux density at outer portions of the magnet system than at an inner portion of the magnet system, wherein the plasma sputters atoms from the sputtering target, which are deposited on the substrate for forming the piezoelectric layer.
A method of forming a piezoelectric layer over a substrate using sputter deposition, the method comprising:
- providing the substrate and a sputtering target on in a reaction chamber of a plasma vapor deposition (PVD) system, the sputtering target comprising aluminum and at least one rare earth element;
- generating a magnetic field in the reaction chamber using a magnet system positioned adjacent the sputtering target, the magnetic field pattern having a greater magnetic flux density at outer portions of the magnet system than at an inner portion of the magnet system;
- injecting a sputtering gas into the reaction chamber;
- and
- forming a plasma from the sputtering gas in the reaction chamber, the plasma sputtering atoms from the sputtering target, which are deposited on the substrate for forming the thin film of the material.
Dependencies are inferred from the claim text.