Dry cleaning method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsYoshio ISHIKAWA, Jun GAO, Hidemasa KAINO
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AssigneeTokyo Electron Limited
InventorsYoshio ISHIKAWA, Jun GAO, Hidemasa KAINO
Estimating the term…
A dry cleaning method is provided that is implemented by a plasma processing apparatus including a processing chamber having a member containing chromium, a mounting table arranged within the processing chamber and configured to hold a substrate, and a gas supply source configured to supply gas into the processing chamber. The dry cleaning method includes a first process step of supplying a first cleaning gas containing oxygen into the processing chamber, supplying a high frequency power or a microwave power into the processing chamber, and generating a plasma from the first cleaning gas; and a second process step of supplying a second cleaning gas containing bromine into the processing chamber after the first process step.
A dry cleaning method implemented by a plasma processing apparatus that includes a processing chamber including a member containing chromium, a mounting table arranged within the processing chamber and configured to hold a substrate, and a gas supply source configured to supply gas into the processing chamber, the dry cleaning method comprising:
Dependencies are inferred from the claim text.