Tritium Direct Conversion Semiconductor Device for Use With Gallium Arsenide or Germanium Sustrates
AssigneeCity Labs, Inc.
InventorsPeter Cabauy, Larry C. Olsen, Noren Pan
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Abstract
A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.
Claims20
A device for producing electricity, comprising:
- a germanium substrate doped a first dopant type;
- a plurality of stacked material layers extending from the substrate, further comprising:
- a base layer doped the first dopant type;
- an emitter layer doped the second dopant type;
- a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type;
- and
- a beta particle source for generating beta particles.
A device for producing electricity, comprising:
- a germanium substrate doped a p dopant type;
- a plurality of stacked material layers extending from the substrate, further comprising:
- a GaAs first layer doped the p dopant type;
- an InGaP base layer doped the p dopant type;
- an InGaP emitter layer doped an n dopant type;
- and
- an InAlP window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the n dopant type;
- a GaAs cap layer doped the n dopant type;
- and
- a beta particle source for generating beta particles.
A device for producing electricity, comprising:
- a beta particle source layer for generating beta particles that travel in opposing directions from the beta particle source layer;
- a plurality of stacked material layers on each one of two opposing surfaces of the beta particle source layer;
- each of the plurality of stacked material layers comprising:
- a germanium substrate doped a first dopant type;
- a base layer doped the first dopant type;
- an emitter layer doped the second dopant type;
- and
- a window layer having a lattice structure matched to the lattice structure of the emitter layer.
Dependencies are inferred from the claim text.