Semiconductor memory device and operating method thereof
AssigneeSK hynix Inc.
InventorSeon-Ki CHO
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes a fuse array block including a plurality of fuses programmed with state information, an operation direction control block suitable for controlling a program operation direction and a boot-up operation direction of the fuse array block, and a fuse information loading block suitable for loading the state information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation.
Claims20
A semiconductor memory device, comprising:
- a fuse array block including a plurality of fuses programmed with state information;
- an operation direction control block suitable for controlling a program operation direction and a boot-up operation direction of the fuse array block;
- and
- a fuse information loading block suitable for loading the state information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation.
A semiconductor memory device, comprising:
- a fuse array block including a plurality of fuses programmed with repair target address information;
- a programming order control block suitable for controlling a program operation direction of the fuse array block;
- a boot-up order control block suitable for controlling a boot-up operation direction of the fuse array block in an opposite direction to the program operation direction;
- and
- a fuse information loading block suitable for loading the repair target address information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation.
A method for operating a semiconductor memory device, comprising:
- setting up a program operation direction and a boot-up operation direction for a plurality of fuses;
- programming repair target address information in the fuses based on the program operation direction which is set up in the setting up;
- comparing the repair target address information which is programmed in the fuses;
- determining whether to perform a boot-up operation in response to a result obtained from the comparing of the repair target address information;
- and
- booting up the repair target address information which is programmed in the fuses based on the boot-up operation direction which is set up in the setting up, in response to a result obtained from the determining.
A semiconductor memory device, comprising:
- a fuse array block including a plurality of fuses;
- a programming order control block suitable for programming state information in the plurality of fuses in a first order;
- and
- a boot-up order control block suitable for controlling the fuse array block to output state information programmed in the plurality of fuses in a second order,
- wherein the first and second orders are in reverse.
Dependencies are inferred from the claim text.