Operating method of nonvolatile memory and method of controlling nonvolatile memory
AssigneeSamsung Electronics Co., Ltd.
InventorsSANG-WAN NAM, KANG-BIN LEE, JUNGHOON PARK
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Abstract
An operating method of a nonvolatile memory, which includes a plurality of cell strings, each cell string having a plurality of memory cells and a string selection transistor stacked on a substrate, includes detecting threshold voltages of the string selection transistors of the plurality of cell strings; adjusting voltages to be supplied to the string selection transistors according to the detected threshold voltages; and applying the adjusted voltages to the string selection transistors to select or unselect the plurality of cell strings during a programming operation.
Claims20
A memory system, comprising:
- a nonvolatile memory device including a plurality of memory cell strings including a plurality of sting selection transistors and a plurality of ground selection transistors, each of the plurality of memory cell strings including a plurality of nonvolatile memory cells, one of the plurality of string selection transistors and one of the plurality of ground selection transistors, the plurality of nonvolatile memory cells being stacked on or above a substrate at a direction that is substantially perpendicular to the substrate, the nonvolatile memory device being configured to detect threshold voltages of the plurality of string selection transistors or the plurality of ground selection transistors, the nonvolatile memory device being configured to provide information associated with the threshold voltages;
- and
- a controller configured to receive the information associated with the threshold voltages.
A method of operating a memory system comprising a nonvolatile memory device and a controller, the nonvolatile memory device including a plurality of memory cell strings including a plurality of sting selection transistors and a plurality of ground selection transistors, each of the plurality of memory cell strings including a plurality of nonvolatile memory cells, one of the plurality of string selection transistors and one of the plurality of ground selection transistors, the plurality of nonvolatile memory cells being stacked on or above a substrate at a direction that is substantially perpendicular to the substrate, the method comprising:
- detecting, by the nonvolatile memory device, threshold voltages of the plurality of string selection transistors or the plurality of ground selection transistors;
- providing, by the nonvolatile memory device, information associated with the threshold voltages;
- and
- receiving, by the controller, the information associated with the threshold voltages.
A memory system, comprising:
- a nonvolatile memory device including a plurality of memory cell strings including a plurality of sting selection transistors and a plurality of ground selection transistors, each of the plurality of memory cell strings including a plurality of nonvolatile memory cells, one of the plurality of string selection transistors and one of the plurality of ground selection transistors, the plurality of nonvolatile memory cells being stacked on or above a substrate at a direction that is substantially perpendicular to the substrate, the nonvolatile memory device being configured to detect threshold voltages of the plurality of string selection transistors or the plurality of ground selection transistors whenever a plurality of programming operations associated with the plurality of memory cell strings are executed, the nonvolatile memory device being configured to provide information associated with the threshold voltages;
- and
- a controller configured to receive the information associated with the threshold voltages.
Dependencies are inferred from the claim text.