Dynamic Programming Of Advanced Nanometer Flash Memory
AssigneeSilicon Storage Technology, Inc.
InventorsHieu Van Tran, Anh Ly, Thuan Vu, Hung Quoc Nguyen
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Abstract
An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.
Claims25
A programming circuit for use in a memory device, comprising:
- a current mirror comprising a transistor;
- a capacitor coupled to the gate of the transistor;
- and
- a switch coupled to a current source and the capacitor, wherein the current source is coupled to the capacitor through the switch in a first mode and the current source is uncoupled from the capacitor and is coupled to a memory cell during a second mode.
A programming circuit for use in a memory device, comprising:
- a current mirror comprising a transistor;
- and
- a switch coupled to a current source and the gate of the transistor, wherein the current source is coupled to the gate of the capacitor through the switch in a first mode and the current source is uncoupled from the gate of the capacitor and is coupled to a memory cell during a second mode.
A method for programming a memory device, comprising:
- coupling a current source to a capacitor through a switch during a first mode;
- decoupling the current source from the capacitor during a second mode;
- providing charge from the capacitor to the gate of a transistor during the second mode;
- drawing current from a memory cell coupled to the drain of the transistor during the second mode.
A programming circuit for use in a memory device, comprising:
- a plurality of current mirrors;
- a bit line coupled to a plurality of memory cells and to a set of switches, each of the switches in the set of switches coupled to one of the plurality of current minors;
- a controller configured to control the set of switches during a programming operation of one of the plurality of memory cells, wherein each of the switches in the set of switches is turned on and turned off during at least part of the programming operation.
A method of programming a memory device comprising a plurality of current minors, a bit line coupled to a plurality of memory cells and to a set of switches, each of the switches in the set of switches coupled to one of the plurality of current minors, and a controller configured to control the set of switches during a programming operation of one of the plurality of memory cells, the method comprising:
- turning on and off, by the controller during the programming operation, each switch in the set of switches in sequence.
Dependencies are inferred from the claim text.