Electronic device

An electronic device comprising semiconductor memory, wherein the semiconductor memory comprises:

• a memory cell block including a first cell array and a second cell array,
• wherein the first cell array includes a word line, a first bit line crossing the word line, and a first variable resistance layer disposed between the word line and the first bit line, and
• wherein the second cell array includes the word line, a second bit line crossing the word line and the first bit line, and a second variable resistance layer disposed between the word line and the second bit line, the second variable resistance layer including a material different from that of the first variable resistance layer, the word line being shared by the first and second cell arrays;
• and
• a column control block configured to supply a first write bias for switching a resistance state of the first variable resistance layer to the first bit line and to supply a second write bias for switching a resistance state of the second variable resistance layer to the second bit line.