Apparatus, method and system for determining reference voltages for a memory

A method at a memory device, the method comprising:

• receiving from a memory controller coupled to the memory device one or more configuration commands indicating a first reference voltage level and a second reference voltage level other than the first reference voltage;
• in response to the one or more configuration commands:
• configuring a first receiver circuit of an input/output (IO) interface to process a first signal based on the first reference voltage level;
• and
• configuring a second receiver circuit of the I/O interface to process a second signal based on the second reference voltage level;
• and
• concurrently receiving the first signal and the second signal at the I/O interface, wherein the first signal is received via a first signal line of a data bus and the second signal is received via a second signal line of the data bus.

A method at a memory controller, the method comprising:

• evaluating a first voltage swing characteristic corresponding to a first signal line of a data bus;
• evaluating a second voltage swing characteristic corresponding to a second signal line of the data bus;
• sending from the memory controller one or more configuration commands indicating a first reference voltage level based on the first voltage swing characteristic and a second reference voltage level based on the second voltage swing characteristic, wherein, in response to the one or more commands, a memory device coupled to the memory controller is configured to process a first signal based on the first reference voltage level and is further configured to process a second signal based on the second reference voltage level;
• and
• concurrently sending to the memory device the first signal via the first signal line and the second signal via the second signal line.