Silicon photonics device and communication system therefor
AssigneeInphi Corporation
InventorsMasaki KATO, Radha NAGARAJAN
Life of this patent
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Abstract
A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.
Claims20
A silicon photonics device, the device comprising:
- a substrate member;
- a SOI (silicon-on-insulator) layer overlying the substrate member, the SOI layer being characterized by a top silicon thickness of 300 nm;
- and
- a waveguide structure overlying the substrate member, the waveguide structure being configured from a portion of the SOI layer.
A silicon photonics device, the device comprising:
- a substrate member;
- a PBS (Polarization Beam Splitter) overlying the substrate member, the PBS having a TE+TM (Transverse Electric+Transverse Magnetic) input and a TE output and a TM output;
- a TE optimized demux (demultiplexer) overlying the substrate member, the TE optimized demux having a TE demux input coupled to the TE output, the TE optimized demux having a plurality of TE demux outputs;
- a TM optimized demux overlying the substrate member, the TM optimized demux having a TM demux input coupled to the TM output, the TM optimized demux having a plurality of TM demux outputs;
- and
- a plurality of PD (photodiode) structures overlying the substrate, each of the PD structures being coupled to one of the plurality of TE demux outputs by a TE-PD path and one of the plurality of TM demux outputs by a TM-PD path.
A silicon photonics device, the device comprising:
- a substrate member;
- a polarization dependent demux (demultiplexer) overlying the substrate member, the polarization dependent demux having a TE+TM input and a plurality of TE outputs and a plurality of TM outputs;
- and
- a plurality of PD (photodiode) structures overlying the substrate, each of the PD structures being coupled to one of the plurality of TE outputs by a TE-PD path and one of the plurality of TM outputs by a TM-PD path, wherein the TE-PD path and TM-PD path are configured to be substantially time delay compensated using delay lines.
A silicon photonics device, the device comprising:
- a substrate member;
- a PBS (Polarization Beam Splitter) overlying the substrate member, the PBS having a TE+TM (Transverse Electric+Transverse Magnetic) input and a TE output and a TM output;
- a polarization dependent demux (demultiplexer) overlying the substrate member, the polarization dependent demux having a TE demux input coupled to the TE output and a TM demux input coupled to the TM output, the polarization dependent demux having a plurality of TE+TM demux outputs;
- and
- a plurality of PD (photodiode) structures overlying the substrate, each of the PD structures being coupled to one of the plurality of TE+TM demux outputs by a common delay line.
A polarization independent multiplexer/demultiplexer comprising a waveguide characterized by a repeating feature of an AWG/Echelle grating configured such that a TE light input and a TM light input focus to the waveguide, wherein the TE light and the TM light are characterized by different grating orders.
Dependencies are inferred from the claim text.