Silicon germanium thickness and composition determination using combined xps and xrf technologies
AssigneeReVera Incorporated
InventorsHeath A. Pois, Wei Ti Lee
Life of this patent
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Abstract
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
Claims20
A method for characterizing a silicon germanium film, said method comprising:
- generating an X-ray beam;
- positioning a sample in a pathway of said X-ray beam;
- collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;
- collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam;
- and
- determining a thickness of the silicon germanium film from the XRF signal and the XPS signal.
A method for characterizing a silicon germanium film, said method comprising:
- generating an X-ray beam;
- positioning a sample in a pathway of said X-ray beam;
- collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;
- collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam;
- and
- determining a composition of the silicon germanium film from the XRF signal and the XPS signal.
A system for characterizing a silicon germanium film, said system comprising:
- an X-ray source for generating an X-ray beam;
- a sample holder for positioning a sample in a pathway of said X-ray beam;
- a first detector for collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;
- and
- a second detector for collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam, wherein the XRF signal or the XPS signal, or both, are for determining a thickness or a composition, or both, of the silicon germanium film.
Dependencies are inferred from the claim text.