Overheat detection circuit and semiconductor device
AssigneeSeiko Instruments Inc.
InventorsMasakazu SUGIURA, Tsutomu TOMIOKA, Hideyuki SAWAI, Atsushi IGARASHI, Nao OTSUKA, Daisuke OKANO
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AssigneeSeiko Instruments Inc.
InventorsMasakazu SUGIURA, Tsutomu TOMIOKA, Hideyuki SAWAI, Atsushi IGARASHI, Nao OTSUKA, Daisuke OKANO
Estimating the term…
Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.
An overheat detection circuit, comprising:
Dependencies are inferred from the claim text.