METHOD FOR GROWING B-Ga2O3 SINGLE CRYSTAL
AssigneesTamura Corporation, Koha Co., Ltd.
InventorsShinya WATANABE, Daiki WAKIMOTO, Kazuyuki IIZUKA, Kimiyoshi KOSHI, Takekazu MASUI
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Abstract
A method for growing a β-Ga2O3-based single crystal, can provide a plate-shaped β-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a β-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a β-Ga2O3-based single crystal having a defect density of not more than 5×105/cm2 in the whole region; and pulling up the seed crystal to grow a β-Ga2O3-based single crystal.
Claims6
A method for growing a β-Ga2O3-based single crystal employing an EFG method, the method comprising:
- bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, the plate-shaped seed crystal comprising a β-Ga2O3-based single crystal having a defect density of not more than 5×105/cm2 in a whole region thereof;
- and
- pulling up the seed crystal to grow the β-Ga2O3-based single crystal.
Dependencies are inferred from the claim text.