Sulfur dioxide etch chemistries
AssigneeMicron Technology, Inc.
InventorGuangjun Yang
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Abstract
Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.
Claims23
A sulfur dioxide etch chemistry comprising:
- a plasma comprising:
- sulfur dioxide;
- and
- at least one halogen-based compound selected from the group consisting of C3F8, C4F8, C4F6, C5F8, CF3I, SF6, BCl3, ClF, ClF3, and NF3.
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The sulfur dioxide etch chemistry of claim 10, wherein the sulfur dioxide etch chemistry comprises from about 0.2 part to about 10 parts SF6 for every about 1 part sulfur dioxide.
The etch chemistry of claim 21, wherein the additive gas comprises at least one of argon, helium, nitrogen, and oxygen.
An etch chemistry consisting of a plasma comprising:
- sulfur dioxide;
- a halogen-based compound selected from the group consisting of C3F8, C4F8, C4F6, C5F8, CF3I, SF6, BCl3, ClF, and ClF3;
- and
- a carrier gas including one or more of argon, helium, nitrogen, and oxygen,
- the etch chemistry comprising between about 0.1 part to about 10 parts of the halogen-based compound per 1 part of the sulfur dioxide.
An etch chemistry consisting of a plasma of sulfur dioxide, a halogen-based compound, and an additive gas.
Dependencies are inferred from the claim text.