Cmp slurry solution for hardened fluid material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Yin Lin, Wen-Kuei Liu, Teng-Chun Tsai, Shen-Nan Lee, Kuo-Cheng Lien, Chang-Sheng Lin, Yu-Wei Chou
Life of this patent
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Abstract
A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head.
Claims21
A method for performing a Chemical Mechanical Polishing (CMP) process, the method comprising:
- applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive selected to change a bonding structure on the surface of the hardened fluid material, wherein the additive includes a stripper additive or an oxidizer additive;
- and
- polishing the surface of the hardened fluid material with a polishing head.
A method comprising:
- applying a fluid material over a patterned substrate;
- hardening the fluid material to form a hardened fluid material;
- and
- performing a Chemical Mechanical Polishing (CMP) process to a surface of the hardened fluid, the CMP process comprising use of a slurry solution that includes an additive to change a bonding structure on the surface of the hardened fluid material.
18-20. (canceled)
A method for performing a Chemical Mechanical Polishing (CMP) process, the method comprising:
- providing an additive to a CMP slurry solution;
- the additive selected to change a bonding structure on a surface of a material;
- applying the CMP slurry solution to the surface of the material;
- and
- polishing the surface of the material with a polishing head and the applied CMP slurry solution.
Dependencies are inferred from the claim text.