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US 2015/0307362 A1Published application
Nanometer-size silicon material and negative-electrode active material, and production process for the same and electric storage apparatus
AssigneeKabushiki Kaisha Toyota Jidoshokki
InventorsYusuke SUGIYAMA, Masataka NAKANISHI, Takashi MORI, Masakazu MURASE, Tomohiro NIIMI, Yoshihiro NAKAGAKI, Shigenori KOISHI, Hiroshi HIRATE
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Abstract
A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm−1, 360±10 cm−1, 498±10 cm−1, 638±10 cm−1, and 734±10 cm−1 in a Raman spectrum, has a large specific surface area, and has a reduced SiO content.
Claims10
A production process for nanometer-size silicon material comprising:
- heat treating a lamellar polysilane obtained by reacting a mixture of hydrogen fluoride (HF) and hydrogen chloride (HCl), and calcium disilicide (CaSi2) one another at a temperature beyond 300° C. under a nonoxidizing atmosphere.
10-24. (canceled)
Dependencies are inferred from the claim text.