Vibrator, manufacturing method therefor, and electronic appliance
AssigneeSeiko Epson Corporation
InventorTakahiko YOSHIZAWA
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Abstract
A vibrator according to the invention includes: a substrate; a lower electrode that is formed on the substrate and has a through hole formed therein; an upper electrode that is disposed above the lower electrode so as to be spaced apart from the lower electrode, and includes a protruding portion that protrudes toward the through hole; and a facing portion that is formed on the substrate, and faces the protruding portion. A distance between the facing portion and the protruding portion is smaller than a distance between the lower electrode and the upper electrode.
Claims8
A vibrator comprising:
- a substrate;
- a lower electrode that is formed on the substrate and has a through hole formed therein;
- an upper electrode that is disposed above the lower electrode so as to be spaced apart from the lower electrode, and includes a protruding portion that protrudes toward the through hole;
- and
- a facing portion that is formed on the substrate, and faces the protruding portion,
- wherein a distance between the facing portion and the protruding portion is smaller than a distance between the lower electrode and the upper electrode.
A method for manufacturing a vibrator, the method comprising:
- forming a first semiconductor layer on a substrate;
- forming a facing portion and a first oxide film formed on a surface of the facing portion by thermally oxidizing the first semiconductor layer;
- forming an opening through which the first oxide film is exposed by forming a second semiconductor layer on the substrate and the first oxide film, and patterning the second semiconductor layer;
- forming a lower electrode and a second oxide film formed on a surface of the lower electrode by thermally oxidizing the second semiconductor layer;
- forming a third semiconductor layer on the substrate, the first oxide film and the second oxide film;
- forming an upper electrode by patterning the third semiconductor layer;
- and
- etching the first oxide film and the second oxide film,
- wherein the second semiconductor layer has a higher impurity concentration than the first semiconductor layer.
Dependencies are inferred from the claim text.