Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same

A semiconductor light emitting device comprising:

• a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers;
• a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer;
• a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes;
• a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer;
• and
• first and second interconnected bumps comprising:
• first and second under bump metallurgy (UBM) layers respectively connected to the first and second electrode layers;
• first and second intermetallic compound (IMC) layers respectively disposed on the first and the second UBM layers;
• first and second solder bumps respectively disposed on the first and second IMC layers,
• wherein the solder bumps are bonded to the UBM layers by the IMC layers;
• and first and second barrier layers covering lateral surfaces of the first and second UBM layers respectively,
• wherein the first and second interconnected bumps are disposed opposite to the first main surface.