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US 2015/0221766 A1Published application
Semiconductor Device having a Field-Effect Structure
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Peter Irsigler
Life of this patent
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Abstract
A semiconductor device includes a silicon semiconductor body having a main surface and a nitrogen concentration which is lower than about 2*1014 cm−3 at least in a first portion of the silicon semiconductor body, the first portion extending from the main surface to a depth of about 50 μm. The nitrogen concentration increases with a distance from the main surface at least in the first portion. The semiconductor device further includes a field-effect structure arranged next to the main surface.
Claims9
A semiconductor device, comprising:
- a silicon semiconductor body having a main surface and comprising a nitrogen concentration which is lower than about 2*1014 cm−3 at least in a first portion of the silicon semiconductor body, the first portion extending from the main surface to a depth of about 50 μm, wherein the nitrogen concentration increases with a distance from the main surface at least in the first portion;
- and
- a field-effect structure arranged next to the main surface.
Dependencies are inferred from the claim text.