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US 2015/0205205 A1Published application
Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
AssigneeFUJIFILM Corporation
InventorsHiromi KOBAYASHI, Haruki INABE
Life of this patent
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Abstract
A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.
Claims18
A resist composition for ArF exposure, comprising;
- (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid;
- (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation;
- (C) a resin containing an alkyl group having 2 or more carbon atoms;
- and
- (D) a solvent;
- and
- wherein the structure of resin (A) and the structure of resin (C) are not in the same compound.
4 more elements
Dependencies are inferred from the claim text.