REN SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON REAlN/REO BUFFER ON Si SUBSTRATE
AssigneeTranslucent, Inc.
InventorsRytis Dargis, Robin Smith, Andrew Clark
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Abstract
Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.
Claims30
Rare earth semiconductor and ferromagnetic material on a silicon substrate comprising:
- a single crystal silicon substrate;
- a single crystal epitaxial rare earth/aluminum nitride layer positioned on the silicon substrate;
- a single crystal epitaxial rare earth oxide layer positioned on the single crystal epitaxial rare earth/aluminum nitride layer;
- and
- a single crystal epitaxial semiconductor and ferromagnetic rare earth nitride layer positioned on the single crystal rare earth oxide layer.
III-V semiconductive material on a silicon substrate comprising:
- a single crystal silicon substrate;
- a layer of single crystal epitaxial rare earth/aluminum nitride positioned on the silicon substrate;
- a layer of single crystal epitaxial rare earth oxide positioned on the layer of single crystal rare earth/aluminum nitride;
- a layer of single crystal epitaxial rare earth nitride positioned on the layer of single crystal rare earth oxide;
- and
- a layer of single crystal epitaxial III-V semiconducting material positioned on the layer of single crystal rare earth nitride.
A method of growing rare earth semiconductor and ferromagnetic material on a silicon substrate comprising the steps of:
- providing a single crystal silicon substrate;
- epitaxially growing a layer of single crystal rare earth/aluminum nitride on the silicon substrate;
- epitaxially growing a layer of single crystal rare earth oxide on the layer of single crystal rare earth/aluminum nitride;
- and
- epitaxially growing a layer of single crystal REN semiconductor and ferromagnetic material on the single crystal rare earth oxide.
A method of growing III-V semiconducting material on a silicon substrate comprising the steps of:
- providing a single crystal silicon substrate;
- epitaxially growing a layer of single crystal rare earth/aluminum nitride on the silicon substrate;
- epitaxially growing a layer of single crystal rare earth oxide on the layer of single crystal rare earth/aluminum nitride;
- epitaxially growing a layer of single crystal rare earth nitride on the layer of single crystal rare earth oxide;
- and
- epitaxially growing a layer of single crystal III-V semiconductive material on the layer of single crystal rare earth nitride.
Dependencies are inferred from the claim text.