Method and Structure for LED with Nano-Patterned Substrate
AssigneeTSMC Solid State Lighting Ltd.
InventorsHsing-Kuo Hsia, Ching-Hua Chiu
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Abstract
The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.
Claims25
A light-emitting diode (LED) structure, comprising:
- a bonding layer disposed over a substrate, wherein the bonding layer contains Au, AuSn, or AuIn;
- a metal layer disposed over the bonding layer;
- a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer;
- a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer;
- a multiple quantum well (MQW) structure disposed between the n-GaN layer and the p-GaN layer;
- and
- a conductive contact disposed on the n-GaN layer;
- wherein the n-GaN layer includes a rough surface with randomly distributed nano-sized dips, and wherein the conductive contact is disposed on some of the nano-sized dips of the rough surface.
A light-emitting diode (LED) structure, comprising:
- a substrate;
- a bonding layer disposed over the substrate, wherein the bonding layer contains Au, AuSn, or AuIn;
- a metal layer disposed over the bonding layer;
- a first doped gallium nitride layer disposed over the metal layer;
- a multiple quantum well (MQW) structure disposed over the first doped gallium nitride layer;
- a second doped gallium nitride layer disposed over the MQW structure, wherein the second doped gallium nitride layer has a roughened surface that includes a plurality of nano-sized dips;
- and
- a metal contact disposed on at least some of the nano-sized dips of the roughened surface.
9-13. (canceled)
15-20. (canceled)
A light-emitting diode (LED) structure, comprising:
- a substrate;
- a bonding layer disposed over the substrate, wherein the bonding layer contains Au, AuSn, or AuIn;
- a metal layer disposed over the bonding layer;
- a first doped semiconductor layer disposed over the metal layer;
- a light-emitting layer disposed over the first doped semiconductor layer;
- a second doped semiconductor layer disposed over the light-emitting layer, wherein the first and second doped semiconductor layers have different types of conductivity, and wherein the second doped semiconductor layer includes a rough surface with a plurality of miniature-sized dips;
- and
- a metal pad disposed on some of the miniature-sized dips of the rough surface.
23-24. (canceled)
27-28. (canceled)
(canceled)
Dependencies are inferred from the claim text.