Zinc Blende Cadmium-Manganese-Telluride with Reduced Hole Compensation Effects and Methods for Forming the Same
AssigneeIntermolecular, Inc.
InventorsSergey Barabash, Amir Bayati, Dipankar Pramanik, Zhi-Wen Sun
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Abstract
Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blende crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.
Claims20
A method for forming cadmium-manganese-telluride (CMT), the method comprising:
- positioning a substrate in a processing chamber of a physical vapor deposition (PVD) tool, wherein the PVD tool further comprises at least one target in the processing chamber, the at least one target comprising cadmium, manganese, tellurium, or a combination thereof;
- introducing dimethyl cadmium gas into the processing chamber;
- and
- causing material to be ejected from the at least one target, the material forming CMT above the substrate.
A method for forming cadmium-manganese-telluride (CMT), the method comprising:
- positioning a substrate in a processing chamber of a physical vapor deposition (PVD) tool, wherein the PVD tool further comprises a first target, a second target, and a third target in the processing chamber, wherein the first target comprising cadmium telluride, the second target comprises manganese telluride, and the third target comprises cadmium, manganese, or a combination thereof;
- and
- causing material to be ejected from the first target, the second target, and the third target, the material forming CMT above the substrate.
A method for forming cadmium-manganese-telluride (CMT), the method comprising:
- forming a first monolayer above a substrate, wherein the first monolayer comprises CMT;
- forming a second monolayer above the first monolayer, wherein the second monolayer comprises cadmium or manganese;
- and
- forming a third monolayer above the second monolayer, wherein the third monolayer comprises CMT.
Dependencies are inferred from the claim text.