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AssigneeJX Nippon Mining & Metals Corporation
InventorsHideo Takami, Masataka Yahagi
Estimating the term…
A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.
A method of producing a thin film mainly comprising titanium oxide, comprising the step of sputtering a sintered sputtering target that comprises components of Ti, Ag and O, contains the respective components at a composition ratio of (TiO2-m)1-nAgn, where 0≦m≦0.5 and 0.0001≦n≦0.2, and has a specific resistance of 10 Ωcm or less, wherein said sputtering step is performed under an argon gas atmosphere without oxygen or with 0.1 to 16% of oxygen to form a thin film on a substrate such that the thin film contains 29.6 atomic percent (at %) or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more.
A method of producing a thin film mainly comprising titanium oxide, comprising the step of sputtering a sputtering target that has a sintered structure, contains Ti, Ag and O as its constituent elements with a composition represented as (TiO2-m)1-nAgn where m and n are numerals satisfying 0≦m≦0.5 and 0.0001≦n≦0.2, has a specific resistance of 10 Ωcm or less, has a matrix phase of titanium oxide, and has a Ag phase dispersed as particles within the matrix phase, wherein said sputtering step is performed under an argon gas atmosphere without oxygen or with 0.1 to 16% of oxygen to form a thin film on a substrate such that the thin film contains 29.6 atomic percent (at %) or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more.
A thin film comprising titanium oxide produced by a process comprising the step of sputtering a sintered sputtering target that comprises components of Ti, Ag and O, contains the respective components at a composition ratio of (TiO2-m)1-nAgn, where 0≦m≦0.5 and 0.0001≦n≦0.2, and has a specific resistance of 10 Ωcm or less, wherein said sputtering step is performed under an argon gas atmosphere without oxygen or with 0.1 to 16% of oxygen to form the thin film on a substrate such that the thin film contains 29.6 atomic percent (at %) or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more.
Dependencies are inferred from the claim text.