# US 2015/0147862 A1 · Method for manufacturing a semiconductor device

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- Number: US 2015/0147862 A1
- Document ID: US20150147862A1
- Status: Published application
- Kind: A1
- Application number: 14/612,397
- Filed: 2015-02-03
- Published: 2015-05-28
- Earliest claimed: 2010-05-19
- Assignees: PS4 Luxco S.a.r.l.
- Applicants: PS4 Luxco S.a.r.l.
- Inventors: Nan WU
- Web page: https://patentgrep.com/patent/US20150147862A1

## CPC

- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10B 12/056: {the transistor being a FinFET}
- H10B 12/36: {the transistor being a FinFET}
- H10D 30/026: {having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow (of LDMOS H10D30/0289)}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10D 30/0241: {doping of vertical sidewalls, e.g. using tilted or multi-angled implants}
- H10D 30/0243: {using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability}
- H10D 30/0245: {by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device includes a semiconductor substrate including a fin. The fin includes first and second fin portions. The first fin portion extends substantially in a horizontal direction to a surface of the semiconductor substrate. The second fin portion extends substantially in a vertical direction to the surface of the semiconductor substrate. The fin has a channel region.

## Claims

### Claim 1

A method for manufacturing a semiconductor device comprising:
patterning a semiconductor substrate;
forming an isolation region and an active region on the substrate, the isolation and active regions being alternately adjacent while extending in a first direction;
forming a first trench portion in at least a surface portion of the semiconductor substrate corresponding to the active region;
forming second trench portions on the isolation region, wherein the second trench portions comprise upper trench portions and lower trench portions, and wherein the lower trench portions are wider than the upper trench portions;
forming a first fin portion, which is a first part of the active region, and which protrudes in a vertical direction to the surface of the substrate; and
forming second fin portions which are continuously connected to the first fin portion and extend in a horizontal direction to the surface of the substrate.