# US 2015/0147481 A1 · Method for making a scissoring-type current-perpendicular-to-the-plane (cpp) magnetoresistive sensor with exchange-coupled soft side shields

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2015/0147481 A1
- Document ID: US20150147481A1
- Status: Published application
- Kind: A1
- Application number: 14/085,593
- Filed: 2013-11-20
- Published: 2015-05-28
- Earliest claimed: 2013-11-20
- Assignees: HGST Nertherlands B..V.
- Applicants: HGST Nertherlands B..V.
- Inventors: Patrick Mesquita Braganca; Jordan Asher Katine; Neil Smith
- Web page: https://patentgrep.com/patent/US20150147481A1

## CPC

- C25D 7/001: {Magnets}
- C25D 5/48: After-treatment of electroplated surfaces
- G11B 5/3912: {Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence)}
- G11B 5/3163: {Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers}
- G11B 5/3909: {Arrangements using a magnetic tunnel junction}
- G11B 2005/3996: {large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices}
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)

## Abstract

A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor with exchange-coupled soft side shields uses oblique angle ion milling to remove unwanted material from the side edges of the upper free layer. All of the layers making up the sensor stack are deposited as full films. The sensor stack is then ion milled to define the sensor side edges. The side regions are then refilled by deposition of an insulating layer. Next, the lower soft magnetic layers of the exchange-coupled side shields are deposited, which also coats the insulating layer up to and past the side edges of the upper free layer. The soft magnetic material adjacent the side edges of the upper free layer is removed by oblique angle ion beam milling. The material for the antiparallel-coupling (APC) layers is deposited, followed by deposition of the material for the upper soft magnetic layers of the exchange-coupled side shields.

## Claims

### Claim 1

A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor, the sensor having a first free ferromagnetic layer (FL1) and a second free ferromagnetic layer (FL2) separated by a nonmagnetic spacer layer, wherein the FL1 and FL2 magnetization directions are free to rotate relative to one another in the presence of an external magnetic field to be sensed, the method comprising:
providing a substrate;
depositing FL1, the nonmagnetic spacer layer and FL2 on the substrate;
patterning FL1, the nonmagnetic spacer layer and FL2 to define spaced-apart side edges at FL1, the nonmagnetic spacer layer and FL2;
depositing a layer of insulating material on the substrate and on the side edges;
depositing a first layer of soft ferromagnetic material on the substrate and in contact with the insulating layer at the side edges of FL1, the nonmagnetic spacer layer and FL2;
performing oblique angle ion milling of the first layer of soft ferromagnetic material to remove the first layer of soft ferromagnetic material adjacent the side edges of FL2;
depositing an antiparallel coupling (APC) layer on the first layer of soft ferromagnetic material; and
depositing a second layer of soft ferromagnetic material on the APC layer and in contact with the insulating layer at the side edges of FL2.

### Claim 2 (depends on 1)

The method of claim 1 wherein depositing the first layer of soft ferromagnetic material comprises depositing the first layer of soft ferromagnetic material by ion beam deposition.

### Claim 3 (depends on 1)

The method of claim 1 wherein depositing the first layer of soft ferromagnetic material comprises depositing the first layer of soft ferromagnetic material by electroplating.

### Claim 4 (depends on 1)

The method of claim 1 wherein performing oblique angle ion milling comprises performing said milling at an angle greater than or equal to 50 degrees and less than or equal to 85 degrees from a normal to the substrate.

### Claim 5 (depends on 1)

The method of claim 1 wherein performing oblique angle ion milling comprises performing said milling at a voltage greater than or equal to 100 V degrees and less than or equal to 300 V.

### Claim 6 (depends on 1)

The method of claim 1 wherein depositing a layer of insulating material on the substrate and on the side edges comprises depositing a layer of alumina.

### Claim 7 (depends on 1)

The method of claim 1 wherein depositing a first layer of soft ferromagnetic material on the substrate and in contact with the insulating layer at the side edges of FL1, the nonmagnetic spacer layer and FL2 comprises depositing material selected from NiFex where x is between 1 and 25, (NiFex)Moy where y is between 1 and 8, and (NiFex)Cry where y is between 1 and 8, where the subscripts are in atomic percent.

### Claim 8 (depends on 1)

The method of claim 1 further comprising:
depositing a base layer of soft ferromagnetic material on the second layer of ferromagnetic material;
depositing an antiferromagnetic coupling (AFC) layer on the base layer;
depositing an upper layer of soft ferromagnetic material on the AFC layer;
depositing an antiferromagnetic layer (AF) on the AFC layer; and
annealing the AF layer in the presence of a magnetic field.

### Claim 9

A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor, the sensor having a first free ferromagnetic layer (FL1) and a second free ferromagnetic layer (FL2) separated by a nonmagnetic spacer layer, wherein the FL1 and FL2 magnetization directions are free to rotate relative to one another in the presence of an external magnetic field to be sensed, the method comprising:
providing a bottom shield S1;
depositing FL1, the nonmagnetic spacer layer and FL2 on S1;
patterning FL1, the nonmagnetic spacer layer and FL2 to define spaced-apart side edges at FL1, the nonmagnetic spacer layer and FL2;
depositing a layer of insulating material on S1 and on the side edges;
depositing, by ion beam deposition, a first layer of soft ferromagnetic material on S1 and in contact with the insulating layer at the side edges of FL1, the nonmagnetic spacer layer and FL2;
performing oblique angle ion milling of the first layer of soft ferromagnetic material to remove the first layer of soft ferromagnetic material adjacent the side edges of FL2, said ion milling being performed at an greater than or equal to 50 degrees and less than or equal to 85 degrees from a normal to S1;
depositing an antiparallel coupling (APC) layer on the first layer of soft ferromagnetic material; and
depositing a second layer of soft ferromagnetic material on the APC layer and in contact with the insulating layer at the side edges of FL2.

### Claim 10 (depends on 9)

The method of claim 9 wherein performing oblique angle ion milling comprises performing said milling at a voltage greater than or equal to 100 V degrees and less than or equal to 300 V.

### Claim 11 (depends on 9)

The method of claim 9 wherein depositing a layer of insulating material on S1 and on the side edges comprises depositing a layer of alumina.

### Claim 12 (depends on 9)

The method of claim 9 wherein depositing a first layer of soft ferromagnetic material on S1 and in contact with the insulating layer at the side edges of FL1, the nonmagnetic spacer layer and FL2 comprises depositing material selected from NiFex where x is between 1 and 25, (NiFex)Moy where y is between 1 and 8, and (NiFex)Cry where y is between 1 and 8, where the subscripts are in atomic percent.