# US 2015/0146841 A1 · Metrology device and metrology method thereof

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- Number: US 2015/0146841 A1
- Document ID: US20150146841A1
- Status: Published application
- Kind: A1
- Application number: 14/092,256
- Filed: 2013-11-27
- Published: 2015-05-28
- Earliest claimed: 2013-11-27
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Su-Horng LIN; Chi-Ming YANG
- Web page: https://patentgrep.com/patent/US20150146841A1

## CPC

- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- G01N 23/02: by transmitting the radiation through the material
- G01N 23/083: the radiation being X-rays
- G01N 23/201: by measuring small-angle scattering
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A metrology device includes a light source and an image sensor. The light source is configured for providing an X-ray illuminating a wafer. The image sensor is configured for detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

## Claims

### Claim 1

A metrology device, comprising:
a light source for providing an X-ray illuminating a wafer; and
an image sensor for detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

### Claim 2 (depends on 1)

The metrology device of claim 1, further comprising:
at least a lens group for focusing the X-ray to the wafer.

### Claim 3 (depends on 1)

The metrology device of claim 1, further comprising:
a processor for obtaining the morphology of the wafer according to the detected spatial domain pattern.

### Claim 4 (depends on 1)

The metrology device of claim 1, further comprising:
a Fourier's transformer for transforming the detected spatial domain pattern into a Fourier frequency domain data; and
a processor for obtaining the morphology of the wafer according to the Fourier frequency domain data.

### Claim 5 (depends on 1)

The metrology device of claim 1, further comprising:
a processor for obtaining the morphology of a metal layer of the wafer according to the detected spatial domain pattern.

### Claim 6 (depends on 1)

The metrology device of claim 1, further comprising:
a processor for obtaining the morphology of a dielectric layer of the wafer according to the detected spatial domain pattern.

### Claim 7 (depends on 1)

The metrology device of claim 1, further comprising:
a processor for obtaining the morphology of a semiconductor layer of the wafer according to the detected spatial domain pattern.

### Claim 8 (depends on 1)

The metrology device of claim 1, further comprising:
a processor for obtaining raised source and drain structures of the wafer according to the detected spatial domain pattern.

### Claim 9 (depends on 1)

The metrology device of claim 1, further comprising:
a processor for obtaining the morphology of at least one Fin field effect transistor of the wafer according to the detected spatial domain pattern.

### Claim 10 (depends on 1)

The metrology device of claim 1, further comprising:
a rotation mechanism for rotating the wafer.

### Claim 11

A metrology device comprising:
a electromagnetic radiation source for providing electromagnetic radiation having a wavelength in the range of 0.01 to 10 nm illuminating a wafer; and
an image sensor for detecting a spatial domain pattern produced when the electromagnetic radiation illuminating the wafer.

### Claim 12 (depends on 11)

The metrology device of claim 11, further comprising:
a lens group disposed between the light source and the image sensor; and

### Claim 13 (depends on 11)

The metrology device of claim 11, further comprising:
a Fourier's transformer connected to the image sensor; and
a processor connected to the Fourier's transformer.

### Claim 14

A metrology method for measuring the morphology of a wafer, comprising:
providing an X-ray to illuminate a wafer; and
detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

### Claim 15 (depends on 14)

The metrology method of claim 14, further comprising:
focusing the X-ray to the wafer.

### Claim 16 (depends on 14)

The metrology method of claim 14, further comprising:
obtaining the morphology of the wafer according to the detected spatial domain pattern.

### Claim 17 (depends on 14)

The metrology method of claim 14, further comprising:
transforming the detected spatial domain pattern into a Fourier frequency domain data; and
obtaining the morphology of the wafer according to the Fourier frequency domain data.

### Claim 18 (depends on 14)

The metrology method of claim 14, further comprising:
rotating the wafer.

### Claim 19 (depends on 14)

The metrology method of claim 14, further comprising:
obtaining the morphology of the wafer according to the detected spatial domain pattern.

### Claim 20 (depends on 14)

The metrology method of claim 14, further comprising:
obtaining raised source and drain structures of the wafer according to the detected spatial domain pattern.