# US 2015/0146469 A1 · Magnetic memory devices and systems

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- Number: US 2015/0146469 A1
- Document ID: US20150146469A1
- Status: Published application
- Kind: A1
- Application number: 14/523,663
- Filed: 2014-10-24
- Published: 2015-05-28
- Earliest claimed: 2008-05-23
- Assignees: Christoforos Moutafis
- Inventors: Christoforos MOUTAFIS; Stavros KOMINEAS
- Web page: https://patentgrep.com/patent/US20150146469A1

## CPC

- G11C 19/0841: {using electric current}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- G11C 11/16: using elements in which the storage effect is based on magnetic spin effect
- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C 11/5607: {using magnetic storage elements}
- G11C 19/08: using thin films in plane structure
- G11C 19/0866: {Detecting magnetic domains}
- H10N 50/10: Magnetoresistive devices
- G11C: STATIC STORES (semiconductor memory devices H10B)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm.

## Claims

### Claim 1

A method of storing one or more bits of information, the method comprising: forming a magnetic bubble; and storing a said bit of information encoded in a topology of a domain wall of said magnetic bubble.

### Claim 2 (depends on 1)

A method as claimed in claim 1 wherein said storing comprises storing said bit encoded using S=O and S=1 status of said domain wall, in particular wherein said S=1 states of said domain wall, wherein said S=1 state comprises a symmetric state of said domain wall and said S=O states includes at least one winding rotation of a magnetisation vector of said domain wall in moving along a border of said bubble defined by said domain wall.

### Claim 3 (depends on 1)

A method as claimed in claim 1 further comprising confining said magnetic bubble in an island of magnetic material.

### Claim 4 (depends on 3)

A method as claimed in claim 3 wherein said confining is such that said bubble is substantially stable without application of a bias field.

### Claim 5 (depends on 1)

A method as claimed in claim 1, further comprising changing a value of a said bit of information by applying to said magnetic bubble a magnetic field gradient pulse or electrical current excitation.

### Claim 6

A magnetic storage device for storing one or more bits of information, the device comprising:
a plurality of islands of magnetic material;
a plurality of magnetic bubbles, at least one per said island;
wherein said bits of information are stored encoded in a topology of a domain wall of said magnetic bubble.

### Claim 7 (depends on 6)

A magnetic storage device as claimed in claim 6 wherein said bits of information are stored encoded in said topology of said domain wall of said magnetic bubble using at least one of a three-ring state and a single domain.

### Claim 8 (depends on 6)

A magnetic storage device as claimed in claim 6 further comprising a mechanism to apply a magnetic field gradient pulse or an electrical current excitation to said magnetic bubble to change a value of a said stored bit.

### Claim 9 (depends on 1)

A method as claimed in claim 1, wherein a said magnetic bubble has a maximum dimension of less than 1 μm.

### Claim 10 (depends on 1)

A method of reading a bit of information, in particular stored using the method as claimed in claim 1, the method comprising applying a magnetic field or an electrical current excitation to induce different dynamic responses from said topology of said domain wall, and detecting a said dynamic response to identify a said topology of said domain wall of a said magnetic bubble and hence deduce a value of a stored said bit of information.

### Claim 11 (depends on 10)

A method of reading a bit of information as claimed in claim 10 wherein said detecting a said dynamic response is by means of magnetoresistive measurement.

### Claim 12 (depends on 10)

A method of reading a bit of information as claimed in claim 10 wherein said applying of said magnetic field comprises applying a magnetic field to cause rotation of a topological defect in said domain wall, and wherein said detecting of said dynamic response comprises detecting said rotation.

### Claim 13 (depends on 10)

A method of reading a bit of information as claimed in claim 10 wherein said applying of said magnetic field comprises applying a field to change a size of a said magnetic bubble.

### Claim 14 (depends on 10)

A method of reading a bit of information as claimed in claim 10, wherein said applying of said magnetic field comprises tuning said magnetic field or said electrical current excitation to an eigenfrequency of said S=1 state of said domain wall.

### Claim 15 (depends on 10)

A method of reading a bit of information as claimed in claim 10 wherein said applying of said magnetic field comprises applying a field gradient pulse or electrical current excitation such as charge current or spin polarized current.

### Claim 16 (depends on 1)

A device for reading a bit of information in particular stored using the method as claimed in claim 1, the device comprising:
means for applying a magnetic field or electrical current excitation such as charge current or spin polarized current to induce different dynamic responses from said topology of said domain wall; and means for detecting a said dynamic response to identify a said topology of said domain wall of a said magnetic bubble and hence deduce a value of a stored said bit of information.

### Claim 17 (depends on 6)

A device as claimed in claim 6, further comprising a pair of conductors one to either side of a said magnetic bubble or a said island for writing or reading a topological state of a said domain wall of said magnetic bubble.

### Claim 18 (depends on 3)

A method as claimed in claim 3, wherein a said island of magnetic material has a maximum dimension of less than 1 μm.

### Claim 19 (depends on 6)

A magnetic storage device as claimed in claim 6, wherein said island of magnetic material has a maximum dimension of less than 1 μm.

### Claim 20 (depends on 5)

A method as claimed in claim 5, wherein said electrical current excitation comprises an electrical charge current or a spin polarized current.

### Claim 21 (depends on 8)

A magnetic device as claimed in claim 8, wherein said electrical current excitation comprises an electrical charge current or a spin polarized current.

### Claim 22 (depends on 10)

A method as claimed in claim 10, wherein said electrical current excitation comprises an electrical charge current or a spin polarized current.
