# US 2015/0144901 A1 · Organic light-emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2015/0144901 A1 - Document ID: US20150144901A1 - Status: Published application - Kind: A1 - Application number: 14/409,054 - Filed: 2013-06-17 - Published: 2015-05-28 - Earliest claimed: 2012-06-21 - Assignees: OSRAM OLED GmbH - Applicants: OSRAM OLED GmbH - Inventors: Daniel Steffen Setz; Erwin Lang; Marc Philippens - Web page: https://patentgrep.com/patent/US20150144901A1 ## CPC - H10K 50/816: Multilayers, e.g. transparent multilayers - H10K 50/852: comprising a resonant cavity structure, e.g. Bragg reflector pair - H10K 50/854: comprising scattering means - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract An organic light-emitting diode includes a carrier substrate, a scattering layer, a first electrode, an organic layer sequence with at least one active layer, and a second electrode wherein all the components are arranged in the stated sequence, the scattering layer has a higher average refractive index than the organic layer sequence, the first electrode has at least n or at least n+1 non-metal layers and n metal layers, n is a natural number greater than or equal to 1 or greater than or equal to 2, and the non-metal layers and the metal layers succeed one another alternately. ## Claims ### Claim at position 1 1-16. (canceled) ### Claim 17 An organic light-emitting diode comprising: a carrier substrate; a scattering layer; a first electrode; an organic layer sequence with at least one active layer; and a second electrode, wherein all the components are arranged in the stated sequence; the scattering layer has a higher average refractive index than the organic layer sequence; the first electrode has at least n or at least n+1 non-metal layers and n metal layers; n is a natural number greater than or equal to 1 or greater than or equal to 2; and the non-metal layers and the metal layers succeed one another alternately. ### Claim 18 (depends on 17) The organic light-emitting diode according to claim 17, wherein n=2 or n=3 or n=4 or n=5, the non-metal layers and the metal layers succeed one another directly, and the first electrode comprises precisely n+1 non-metal layers. ### Claim 19 (depends on 17) The organic light-emitting diode according to claim 17, wherein n is a natural number greater than or equal to 2, the first electrode has at least n+1 non-metal layers, the first electrode has two peripheral layers formed by the non-metal layers, and the two peripheral non-metal layers are each made from a transparent conductive oxide. ### Claim 20 (depends on 17) The organic light-emitting diode according to claim 17, wherein the second electrode is reflective, the first electrode is radiation-transmissive, radiation outcoupling out of the light-emitting diode proceeds through the carrier substrate. ### Claim 21 (depends on 17) The organic light-emitting diode according to claim 17, wherein both the first electrode and the second electrode are transmissive to the radiation generated when the light-emitting diode is in operation such that the generated radiation is emitted at both major sides of the light-emitting diode. ### Claim 22 (depends on 17) The organic light-emitting diode according to claim 17, wherein the non-metal layers are each made of a transparent, conductive oxide and the metal layers consist of one or more of Ag, Al, Au, Cd, Co, Cr, Cu, Ge, In, Mg, Mn, Mo, Ni, Pd, Pt, Si, Sn, Ti, Zn and Zr. ### Claim 23 (depends on 19) The organic light-emitting diode according to claim 19, wherein a thickness of each of the metal layers is 1.5 nm to 7.5 nm, and the peripheral non-metal layers located closest to the carrier substrate and closest to the organic layer sequence each have a thickness of 12.5 nm to 70 nm. ### Claim 24 (depends on 17) The organic light-emitting diode according to claim 17, wherein n>2, and at least one or all of non-peripheral non-metal layers of the non-metal layers has/have a thickness of 70 nm to 250 nm. ### Claim 25 (depends on 17) The organic light-emitting diode according to claim 17, wherein at least one or all of the non-peripheral non-metal layers of the non-metal layers has/have an optical thickness of m λ/2, with a tolerance of at most 0.1 λ, m is a natural number greater than or equal to 1, and 2 is a peak wavelength of the radiation generated in the organic layer sequence. ### Claim 26 (depends on 17) The organic light-emitting diode according to claim 17, wherein the second electrode comprises at least two sublayers of various materials. ### Claim 27 (depends on 26) The organic light-emitting diode according to claim 26, wherein the second electrode comprises precisely two sublayers, the first sublayer located closer to the organic layer sequence is formed from Ag or an Ag alloy and has a thickness of 20 nm to 60 nm, and the second sublayer is formed from Al or an Al alloy and has a thickness of 40 nm to 200 nm. ### Claim 28 (depends on 17) The organic light-emitting diode according to claim 17, wherein the scattering layer comprises a matrix material and scattering centers embedded therein, and a refractive index of the matrix material is at least 1.65. ### Claim 29 (depends on 28) The organic light-emitting diode according to claim 28, wherein a refractive index difference between the matrix material and a material of the scattering centers of the scattering layer amounts to at least 0.1, and an average geometric thickness of the scattering layer is 5 μm to 25 μm. ### Claim 30 (depends on 17) The organic light-emitting diode according to claim 17, wherein the organic layer sequence comprises at least two active layers, which succeed one another in the direction away from the carrier substrate. ### Claim 31 (depends on 30) The organic light-emitting diode according to claim 30, wherein at least one of the active layers is at an optical distance of ¾λ from the second electrode, with a tolerance of at most 0.1λ. and relative to the peak wavelength of the radiation generated in the active layer. ### Claim 32 (depends on 17) The organic light-emitting diode according to claim 17, further comprising at least one charge carrier generation layer comprising an interlayer with or of a metal, a metal oxide or a metal halide located between an n-conductive and a p-conductive layer of the charge carrier generation layer, and the interlayer has an average thickness of 0.8 nm to 4.5 nm. ### Claim 33 An organic light-emitting diode comprising a carrier substrate, a scattering layer, a first electrode, an organic layer sequence having at least one active layer, and a second electrode, wherein all components are arranged in the stated sequence, the scattering layer has a higher average refractive index than the organic layer sequence, the first electrode has at least n or at least n+1 non-metal layers and n metal layers, the non-metal layers and the metal layers succeed one another alternately, n is a natural number greater than or equal to 3, a non-metal layer located closest to the organic layer sequence has a thickness of 12.5 nm to 70 nm, a non-metal layer located closest to the scattering layer has a thickness of 12.5 nm to 70 nm, and at least one non-peripheral non-metal layer has a thickness of 70 nm to 250 nm. ### Claim 34 (depends on 33) The organic light-emitting diode according to claim 33, wherein the non-metal layer located closest to the organic layer sequence has a thickness of 5 nm to 20 nm, the non-metal layer located closest to the scattering layer has a thickness of 40 nm to 60 nm, and the at least one non-peripheral non-metal layer has a thickness of 100 nm to 140 nm. ### Claim 35 (depends on 33) The organic light-emitting diode according to claim 33, wherein the second electrode is reflective to radiation generated when the light-emitting diode is in operation, and the second electrode comprises at least two sublayers being formed of various materials and/or of various material compositions. ### Claim 36 (depends on 35) The organic light-emitting diode according to claim 35, wherein the second electrode is formed as a Bragg mirror comprising a sequence of layers of alternately high and low refractive index.