# US 2015/0144592 A1 · Method for manufacturing magnetic head > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2015/0144592 A1 - Document ID: US20150144592A1 - Status: Published application - Kind: A1 - Application number: 14/549,428 - Filed: 2014-11-20 - Published: 2015-05-28 - Earliest claimed: 2012-03-26 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Hitoshi IWASAKI; Masayuki TAKAGISHI - Web page: https://patentgrep.com/patent/US20150144592A1 ## CPC - G11B 5/112: {Manufacture of shielding device} - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G11B 5/11: Shielding of head against electric or magnetic fields - G11B 5/3912: {Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence)} - G11B 5/3932: {Magnetic biasing films} - G11B 2005/3996: {large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices} - Y10T 29/49052: by etching - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract According to one embodiment, a magnetic head includes a reproducing unit to detect a medium magnetic field recorded in a magnetic recording medium. The reproducing unit includes first and second magnetic shields, a stacked body, and a side wall film. The stacked body is provided between the first and second magnetic shields and includes first and second magnetic layer and an intermediate layer provided between them. The stacked body has a side wall. The side wall intersects a plane perpendicular to a stacking direction from the first magnetic shield toward the second magnetic shield. The side wall film covers at least a part of the side wall of the stacked body. The side wall film includes at least one of Fe and Co, and has a composition different from a composition of the first magnetic layer and different from a composition of the second magnetic layer. ## Claims ### Claim 1 A method for manufacturing a magnetic head, the method comprising: forming a stacked film on a first magnetic shield including at least one of Fe and Co, the stacked film being configured to form a stacked body, the stacked body including a first magnetic layer, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer; forming the stacked body by removing a part of the stacked film by etching; forming a side wall film by over-etching the first magnetic shield to cause a material included in the first magnetic shield to adhere to a side wall of the stacked body, the side wall film including at least one of Fe and Co and having a composition different from a composition of the first magnetic layer and different from a composition of the second magnetic layer; and forming a second magnetic shield on the stacked body to form a reproducing unit. ### Claim 2 (depends on 1) The method according to claim 1, wherein the side wall film includes at least one of oxygen, nitrogen, and carbon. ### Claim 3 (depends on 1) The method according to claim 1, wherein the side wall film includes a compound including at least one of oxygen, nitrogen, and carbon. ### Claim 4 (depends on 1) The method according to claim 1, wherein the side wall film includes an oxide including at least one of oxygen, nitrogen, and carbon. ### Claim 5 (depends on 1) The method according to claim 1, wherein the side wall film is electrically non-conductive. ### Claim 6 (depends on 1) The method according to claim 1, wherein a thickness of the side wall film is not less than a thickness of a one-atom layer and not more than 5 nm. ### Claim 7 (depends on 1) The method according to claim 1, wherein at least one of the first magnetic shield and the second magnetic shield includes at least one of CoFeAlSi, CoFeMnGe, FeCoGe, FeCoGa, FeCoSi, and FeCoAl. ### Claim 8 (depends on 1) The method according to claim 1, wherein the first magnetic layer is disposed between the first magnetic shield and the intermediate layer. ### Claim 9 (depends on 1) The method according to claim 1, wherein the side wall film includes at least one element selected from oxygen, nitrogen, and carbon, and the element is introduced from a resist material used as a mask used in one of the etching and over-etching. ### Claim 10 (depends on 1) The method according to claim 1, wherein the one of the etching and over-etching is performed by using a gas including nitrogen gas. ### Claim 11 (depends on 1) The method according to claim 1, wherein the stacked body has an air bearing surface and an opposite surface opposite to the air bearing surface, the forming the side wall film includes forming a back-side side wall film on the opposite surface by the over-etching the first magnetic shield, and the back-side side wall film includes the at least one of Fe and Co and has a composition different from the composition of the first magnetic layer and different from the composition of the second magnetic layer. ### Claim 12 (depends on 11) The method according to claim 11, wherein the back-side side wall film includes at least one of oxygen, nitrogen, and carbon. ### Claim 13 (depends on 11) The method according to claim 11, wherein the back-side side wall film includes a compound including at least one of oxygen, nitrogen, and carbon. ### Claim 14 (depends on 11) The method according to claim 11, wherein the back-side side wall film includes an oxide including at least one of oxygen, nitrogen, and carbon. ### Claim 15 (depends on 11) The method according to claim 11, wherein the back-side side wall film is electrically non-conductive. ### Claim 16 (depends on 11) The method according to claim 11, wherein a thickness of the back-side side wall film is not less than a thickness of a one-atom layer and not more than 5 nm.