Bias generator for flash memory and control method thereof

A flash memory, comprising:

• a bias voltage generator comprising a reference voltage generating circuit and a voltage converting circuit, wherein the reference voltage generating circuit receives a program signal or an erase signal, and generates a reference voltage, wherein if the program signal is received by the reference voltage generating circuit, the reference voltage has a first positive temperature coefficient, wherein if the erase signal is received by the reference voltage generating circuit, the reference voltage has a first negative temperature coefficient, wherein the voltage converting circuit receives the reference voltage, and converts the reference voltage into a control voltage and a source line voltage;
• a memory array receiving the control voltage and the source line voltage during a program cycle or an erase cycle of the memory array;
• a sense amplifier connected with the memory array, wherein during a verification of the memory array, the sense amplifier receives a memory cell current from the memory array;
• and
• a bias current generator, wherein during the verification of the memory array, the bias current generator generates a reference current to the sense amplifier, wherein the reference current has a second positive temperature coefficient.