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US 2015/0092483 A1Published application
Modified reset state for enhanced read margin of phase change memory
AssigneeMicron Technology, Inc.
InventorsMATTIA BONIARDI, ANDREA REDAELLI, FABIO PELLIZZER, DANIELE LELMINI, AGOSTINO PIROVANO
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Abstract
Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.
Claims21
(canceled)
A method, comprising:
- applying a first electrical signal to a memory cell for programming the memory cell to a resistance state;
- and
- applying a second electrical signal to the memory cell for programming the memory cell to an increased resistance state, wherein the second electrical signal comprises an added trailing edge time relative to the first electrical pulse.
A memory device, comprising:
- a memory array comprising a memory cell, wherein the memory cell comprises phase change memory;
- and
- a memory controller configured to:
- apply a first electrical signal to the memory cell for programming the memory cell to a resistance state;
- and
- apply a second electrical signal to the memory cell for programming the memory cell to an increased resistance state, wherein the second electrical signal comprises an added trailing edge time relative to the first electrical pulse.
3 more elements
A system, comprising:
- a memory array comprising a memory cell, wherein the memory cell comprises phase change memory;
- a memory controller configured to program the memory cell in response to a write command, wherein the memory controller is configured to program the memory cell by:
- applying a first electrical signal to the memory cell for programming the memory cell to a resistance state;
- and
- applying a second electrical signal to the memory cell for programming the memory cell to an increased resistance state, wherein the second electrical signal comprises an added trailing edge time relative to the first electrical pulse;
- and
- a processor configured to initiate the write command for accessing the memory array.
4 more elements
Dependencies are inferred from the claim text.