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US 2015/0092482 A1Published application
Electronic device and method of fabricating the same
AssigneeSK hynix Inc.
InventorGa-Young Ha
Life of this patent
Estimating the term…
Abstract
An electronic device includes a semiconductor memory, wherein the semiconductor memory includes a variable resistance element formed over a substrate, and a multi-layer passivation layer positioned over sidewalls of the variable resistance element and having two or more insulating layers formed over the sidewalls of the variable resistance element.
Claims20
An electronic device comprising a semiconductor memory unit that comprises:
- a variable resistance element formed over a substrate;
- and
- a multi-layer passivation layer positioned over sidewalls of the variable resistance element and having two or more insulating layers formed over the sidewalls of the variable resistance element.
An electronic device comprising a semiconductor memory which includes:
- a variable resistance element formed over a substrate and comprising a stacked layer of two magnetic layers and a tunnel barrier layer interposed therebetween;
- a multi-layer passivation layer formed over sidewalls of the variable resistance element and including two or more insulating layers perpendicular to the stacked layer of two magnetic layers and a tunnel barrier layer;
- and
- a reduction region formed between the multi-layer passivation layer and one of the sidewalls of the variable resistance element to reduce an amount of an oxidation material on the sidewalls.
1 more element
Dependencies are inferred from the claim text.