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US 2015/0092480 A1Published application
Electronic device and method of fabricating the same
AssigneeSK hynix Inc.
InventorsWon-Joon Choi, Ki-Seon Park, Cha-Deok Dong, Bo-Mi Lee, Guk-Cheon Kim, Seung-Mo Noh
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Abstract
An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.
Claims20
An electronic device comprising a semiconductor memory unit that includes:
- a seed layer including conductive hafnium silicate;
- a first magnetic layer formed over the seed layer;
- a tunnel barrier layer formed over the first magnetic layer;
- and
- a second magnetic layer formed over the tunnel barrier layer.
2 more elements
An electronic device comprising a semiconductor memory that includes:
- a substrate;
- a variable resistance element formed over the substrate and including a sequentially stacked structure including a seed layer formed on the substrate, a first magnetic layer over the seed layer, a tunnel barrier over the first magnetic layer, and a second magnetic layer over the tunnel barrier layer;
- wherein the seed layer includes conductive hafnium silicate and the first magnetic layer has a thickness greater than a thickness when the seed layer does not include the conductive hafnium silicate.
An electronic device comprising a semiconductor memory that includes:
- a variable resistance element including a seed layer containing conductive hafnium silicate;
- a first contact plug positioned below the variable resistance element and providing an electrical connection between the variable resistance element and a switching element formed in a substrate;
- and
- a second contact plug being positioned above the variable resistance element and providing an electrical connection between the variable resistance element to a conductive line.
1 more element
Dependencies are inferred from the claim text.