Power Semiconductor Module and Method for Producing a Power Semiconductor Module

A power semiconductor module, comprising:

• a printed circuit board having a first, structured metalization arranged on a top side of the printed circuit board and at least one second metalization, which is arranged below the first metalization in a vertical direction, parallel to the first metalization and insulated therefrom;
• at least one bare semiconductor chip arranged on the top side of the printed circuit board and having a plurality of contact electrodes, which are connected by bonding wires to corresponding contact pads of the first metalization on the top side of the printed circuit board, wherein a first portion of the contact electrodes and of the corresponding contact pads carry high voltage during operation, and wherein all high-voltage-carrying contact pads are conductively connected to the second metalization via plated-through holes;
• and
• an insulation layer which completely covers the chip and a delimited region of the printed circuit board around the chip,
• wherein all high-voltage-carrying contact pads and the plated-through holes are completely covered by the insulation layer,
• wherein a second portion of the contact electrodes and of the corresponding contact pads are under low voltages during operation.