US 2015/0091652 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.

Claims14

Dependent claims

A semiconductor device comprising:

a power amplifier for amplifying RF signals in a plurality of frequency bands;
an output matching circuit connected to an output of said power amplifier;
a first capacitor connected at a first end to an output of said output matching circuit;
a plurality of output paths;
a switch connected to a second end of said first capacitor and directing each of the RF signals to one of said plurality of output paths in accordance with frequency band of each of the RF signals;
and
a plurality of second capacitors, each second capacitor being connected in series to a respective one of said output paths, wherein said switch and either said first capacitor or said plurality of second capacitors, or both of said first capacitor and said plurality of second capacitors, are integrated as a single monolithic microwave integrated circuit.

4 more elements

A semiconductor device comprising:

a power amplifier for amplifying RF signals in a plurality of frequency bands;
an output matching circuit connected to an output of said power amplifier;
a first capacitor connected at a first end to an output of said output matching circuit;
a plurality of output paths;
a switch connected to a second end of said first capacitor and directing each of the RF signals to one of said plurality of output paths in accordance with frequency band of each of the RF signals;
and
a plurality of second capacitors, each second capacitor being connected in series to a respective one of said output paths, wherein capacitance of said first capacitor is larger than capacitance of any of said second capacitors.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims14