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US 2015/0091634 A1Published application
Gate control circuit for mos switch
AssigneeAtmel Corporation
InventorWolfgang Roeper
Life of this patent
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Abstract
A gate drive circuit is disclosed that charges the gate of a switching transistor to a voltage that is high enough to turn the switching transistor fully on and then prevent the charge from flowing back into the gate drive circuit. The gate drive circuit works with a ground rectifier switch by providing a fully differential connection of the switching transistor and its capacitor and resistor in parallel with the antenna.
Claims8
A circuit comprising:
- a switching transistor having a gate, drain and source;
- a coil coupled between the source and drain of the switching transistor;
- a ground rectifier coupled in parallel with the coil;
- and
- a diode coupled between the gate of the switching transistor and a supply voltage.
2 more elements
Dependencies are inferred from the claim text.