Vertical Shunt Resistor
AssigneeInfineon Technologies AG
InventorsPeter Kanschat, Thilo Stolze
Life of this patent
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Abstract
A measurement resistor for current measurement is described. According to one exemplary embodiment, the measurement resistor includes a first and a second metal layer, an electrically insulating interlayer and a resistive layer. The first metal layer is arranged in a first plane. The second metal layer is arranged in a second plane that is essentially parallel to the first plane and separated from the first plane. The electrically insulating interlayer is arranged between the first and second metal layers and mechanically connects the first and second metal layers to one another. The resistive layer electrically connects the first and second metal layers to one another.
Claims15
A measurement resistor, comprising:
- a first metal layer arranged in a first plane;
- a second metal layer arranged in a second plane that is parallel to the first plane and separated from the first plane;
- an electrically insulating interlayer arranged between the first and second metal layers and which mechanically connects the first and second metal layers to one another;
- and
- a resistive layer which electrically connects the first and second metal layers to one another.
A method for producing a measurement resistor, the method comprising:
- providing an approximately U-shaped structure, two approximately parallel branches of the U-shape structure forming two metal layers which are separated from one another and parallel to one another and which are electrically connected to one another by a resistive layer;
- and
- arranging an interlayer made of insulating material between the parallel branches of the U-shape, so that the insulating material mechanically connects the two parallel branches of the U-shape.
A method for producing a measurement resistor, the method comprising:
- providing a power electronic substrate having an insulation carrier made of ceramic or insulated metal and metalization on both sides;
- and
- fixing a resistive layer on a side surface of the power electronic substrate, so that the resistive layer connects the metalizations.
A power semiconductor module, comprising:
- a power electronic substrate having a structured metalization, which comprises a plurality of contact pads;
- at least one electronic component arranged on the power electronic substrate;
- a measurement resistor, which comprises:
- a first metal layer is arranged on one of the contact pads of the structured metalization and mechanically and electrically connected to that contact pad;
- a second metal layer arranged in a plane parallel to the structured metalization and separated from the structured metallization;
- an electrically insulating interlayer arranged between the first and second metal layers and which mechanically connects the first and second metal layers to one another;
- and
- a resistive layer which electrically connects the first and second metal layers to one another.
Dependencies are inferred from the claim text.