Semiconductor device and method for forming the same
AssigneeSK hynix Inc.
InventorMin Su PARK
Life of this patent
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Abstract
A semiconductor device includes: a second conductive layer formed over a first conductive layer; and a dummy conductive layer formed between the first and second conductive layers with through-holes formed therein. The first and second conductive layers include signal lines electrically coupled to each other through signal metal contacts passing through the through-holes, and the second conductive layer includes power lines electrically coupled to the dummy conductive layer through power metal contacts.
Claims19
A semiconductor device comprising:
- a second conductive layer formed over a first conductive layer;
- and
- a dummy conductive layer formed between the first and second conductive layers with through-holes formed therein,
- wherein the first and second conductive layers comprise signal lines electrically coupled to each other through signal metal contacts passing through the through-holes, and
- the second conductive layer comprises power lines electrically coupled to the dummy conductive layer through power metal contacts.
A method for forming a semiconductor device, comprising the steps of:
- forming a first insulating layer over a first conductive layer including signal lines;
- forming a dummy conductive layer having through-holes over the first insulating layer;
- forming a second insulating layer over the dummy conductive layer;
- forming signal metal contacts in the first and second insulating layers to pass through the through-holes, and forming power metal contacts in the second insulating layer;
- and
- forming a second conductive layer including signal lines and power lines over the second insulating layer.
A semiconductor device comprising:
- a first conductive layer;
- a second conductive layer including signal lines formed over the first conductive layer including signal lines;
- a dummy conductive layer including through-holes formed between the first conductive layer and the second conductive layer,
- wherein the first and second conductive layers are electrically coupled to each other through signal metal contacts passing through the through-holes.
Dependencies are inferred from the claim text.