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US 2015/0091173 A1Published application
Semiconductor device and method of manufacturing the same, and power supply apparatus
AssigneeFujitsu Limited
InventorYouichi KAMADA
Life of this patent
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Abstract
A semiconductor device includes an electrode material diffusion suppression layer provided either between a gate electrode and a gate insulation film, between Al-containing ohmic electrodes and an Au interconnection, and below the gate electrode and above the Al-containing ohmic electrodes, the electrode material diffusion suppression layer having a structure wherein a first the TaN layer, a Ta layer, and a second the TaN layer are stacked in sequence.
Claims9
A semiconductor device comprising:
- an ohmic electrode comprising an Al layer;
- an Au interconnection;
- and
- an electrode material diffusion suppression layer, provided between the Al layer and the Au interconnection, comprising a first TaN layer, a Ta layer, and a second TaN layer stacked in sequence.
1 more element
A power supply apparatus comprising:
- a semiconductor device comprising:
- an ohmic electrode comprising an Al layer;
- an Au interconnection;
- and
- an electrode material diffusion suppression layer, provided between the Al layer and the Au interconnection, comprising a first TaN layer, a Ta layer, and a second TaN layer stacked in sequence.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an ohmic electrode comprising an Al layer;
- forming an electrode material diffusion suppression layer by stacking a first TaN layer, a Ta layer, and a second TaN layer, in sequence, over the Al layer;
- and
- forming an Au interconnection over the electrode material diffusion suppression layer.
1 more element
Dependencies are inferred from the claim text.