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US 2015/0091159 A1Published application
Semiconductor device with fine conductive pillar and method of manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorsChun-Ming Tsai, Yi-Hsuan Huang, Yueh-Ping Chung, Ya-Hui Lu
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Abstract
A semiconductor device and a method of manufacturing the same are provided. A semiconductor device comprises a substrate, a conductive pattern formed on the substrate, and at least a conductive pillar having a predetermined height formed on the conductive pattern. The conductive pillar can be formed under a focus ion beam (FIB) or an electron beam environment. In one embodiment, a diameter of the conductive pillar is no more than 10 μm.
Claims19
A semiconductor device, comprising:
- a substrate;
- a conductive pattern formed on the substrate;
- and
- at least a conductive pillar having a predetermined height formed on the conductive pattern, wherein a diameter of the conductive pillar is no more than 10 μm.
1 more element
A method for manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a conductive pattern on the substrate;
- and
- forming at least a conductive pillar having a predetermined height on the conductive pattern formed under a focus ion beam (FIB) or an electron beam environment, wherein a diameter of the conductive pillar is no more than 10 μm.
1 more element
Dependencies are inferred from the claim text.